Seoul: SK hynix Inc. said Wednesday it has unveiled a sample of its next-generation high bandwidth memory (HBM) for the first time during GTC 2025, an annual tech conference hosted by Nvidia Corp. The South Korean chip giant opened a booth titled "Memory, Powering AI and Tomorrow" at GTC 2025 that kicked off Monday for a five-day run in California.
According to Yonhap News Agency, the showcase highlights SK hynix's HBM and other memory products for artificial intelligence (AI) data centers and on-device and memory solutions for the automotive business that are essential for the AI era. Among its featured products is the 12-layer HBM3E, currently the most advanced HBM in mass production.
The company is also showcasing a prototype of the next-generation 12-layer HBM4, which is still under development, for the first time, as well as a small outline compression attached memory module (SOCAMM), a low-power DRAM-based memory module optimized for AI servers. Following the industry's first mass production and supply of the 12-layer HBM3E, SK hynix is now planning to complete the preparatory works for large-scale production of the HBM4 within the second half of the year.
Meanwhile, SK hynix's top executives, led by Chief Executive Officer (CEO) Kwak Noh-jung, are set to meet with global AI industry leaders during GTC 2025 to strengthen collaborations and explore future opportunities in AI-driven memory technology.